| PART |
Description |
Maker |
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| 2SK2258-01 |
N-channel MOS-FET 4 A, 1000 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| SFF6N100 |
4.5 AMP 1000 VOLTS 2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF10N100_3 SFF10N100-3 SFF10N100/3 |
10 AMP 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SFF10N100B |
10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IXFR12N100Q IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SIHFPG30-E3 |
3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 ROHS COMPLIANT PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| SML100J19 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 19 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
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